feb.1999 mitsubishi transistor modules QM150HY-2H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM150HY-2H ? i c collector current ........................ 150a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 108 93 (7.5) (7.5) 23 23 f 6.5 12 c 1 e 1 c 1 34 13 10.5 10.5 e 1 b 1 tab#110, t=0.5 m5 37 30 23 6.5 b 1 c e c e 1 46.5 5 8 8 15 label
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m6 typical value ratings 1000 1000 1000 7 150 150 1000 8 1500 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =150a, i b =3a Ci c =150a (diode forward voltage) i c =150a, v ce =2.8v/5v v cc =600v, i c =150a, i b1 =Ci b2 =3a transistor part diode part conductive grease applied typ. max. 2.0 2.0 200 2.5 3.5 1.8 3.0 15 3.0 0.125 0.6 0.065 mitsubishi transistor modules QM150HY-2H high power switching use insulated type
feb.1999 1 10 0 10 ? 10 ? 10 3 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 200 160 120 80 40 0 01 23 4 5 t j =25? i b =1.5a i b =0.2a i b =0.8a i b =0.1a i b =0.4a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v ce =5.0v v ce =2.8v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 3457 1 10 2 3457 7 2 10 v be(sat) t j =25? t j =125? i b =3a 23 v ce(sat) 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.8 2.2 2.6 3.0 3.4 3.8 v ce =2.8v t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v cc =600v t j =25? t j =125? t f t on t s i b1 =? b2 =3a 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 i c =100a t j =25? t j =125? i c =200a i c =50a i c =150a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM150HY-2H high power switching use insulated type
feb.1999 0 10 1 10 2 10 3 10 0 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 7 5 4 3 2 2 10 7 5 4 3 ? 10 23457 0 10 23457 1 10 t j =25? t j =125? t f t s 7 1 10 7 v cc =600v i b1 =3a i c =150a 2 3 0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t w =50 s 100 s 200 s dc 1m s 320 80 0 0 200 1000 240 160 400 600 800 280 200 120 40 t j =125? i b2 =?a i b2 =?a 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 7 5 3 2 7 5 3 2 7 5 3 2 1.6 0.4 0.8 1.2 2.0 0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 3 2 7 5 3 25 444 t c =25? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM150HY-2H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 ? 10 ? 10 ? 10 1 10 0 10 1 10 2 10 0 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 200 600 1000 1400 1600 1200 800 400 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr v cc =600v i b1 =? b2 =3a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 1.0 0.8 0.6 0.4 0.2 0 444 23457 2345 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM150HY-2H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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